2SC5551A no. a1118-1/4 features high f t : (f t =3.5ghz typ). large current : (i c =300ma). large allowable collector dissipation (1.3w max). specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo 40 v collector-to-emitter voltage v ceo 30 v emitter-to-base voltage v ebo 2v collector current i c 300 ma collector current (pulse) i cp 600 ma collector dissipation p c when mounted on ceramic substrate (250mm 2 ? 0.8mm) 1.3 w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =20v, i e =0a 1.0 a emitter cutoff current i ebo v eb =1v, i c =0a 5.0 a continued on next page. sanyo semiconductors data sheet www.semiconductor-sanyo.com/network ordering number : ena1118 d0209ab tk im tc-00002042 specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 2SC5551A npn epitaxial planar silicon transistor high-frequency medium-output amplifier applications
2SC5551A no. a1118-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit dc current gain h fe 1v ce =5v, i c =50ma 90 270 h fe 2v ce =5v, i c =300ma 20 gain-bandwidth product f t v ce =5v, i c =50ma 3.5 ghz output capacitance cob v cb =10v, f=1mhz 2.9 4.0 pf reverse transfer capacitance cre v cb =10v, f=1mhz 1.5 pf collector-to-emitter saturation voltage v ce (sat) i c =50ma, i b =5ma 0.07 0.3 v base-to-emitter saturation voltage v be (sat) i c =50ma, i b =5ma 0.8 1.2 v * : the 2SC5551A is classified by 50ma h fe as follows : marking eb e eb f rank e f h fe 90 to 180 135 to 270 package dimensions unit : mm (typ) 7007b-004 h fe -- i c collector current, i c -- ma dc current gain, h fe collector-to-emitter voltage, v ce -- v collector current, i c -- ma i c -- v ce 0 0 20 it01066 it01067 500 a 450 a 400 a 350 a 300 a 250 a 200 a 150 a 100 a 50 a 40 60 80 100 4 12 8 16 20 1.0 10 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 2 3 5 7 100 2 3 5 7 1000 v ce =5v i b =0 a
2SC5551A no. a1118-3/4 ? s21e ? 2 -- i c collector current, i c -- ma forward transfer gain, ? s21e ? 2 -- db collector dissipation, p c -- w p c -- ta ambient temperature, ta -- c cob, cre -- v cb collector-to-base voltage, v cb -- v collector current, i c -- ma gain-bandwidth product, f t -- ghz f t -- i c collector current, i c -- ma a s o collector-to-emitter voltage, v ce -- v v ce (sat) -- i c collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- v it01070 it01072 it01071 it01073 1.0 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 10 cob cre f=1mhz v ce =5v 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 0.1 2 3 5 7 1.0 2 3 5 7 10 1.0 2 3 5 7 10 2 35 10 2 3 5 7 100 2 3 5 7 1000 i c =300ma i cp =600ma dc operation 0204060 80 100 120 140 160 0 0.2 0.4 0.6 0.8 1.0 1.2 1.3 1.4 1ms 10ms it01069 v ce =5v 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 0 2 4 6 8 10 12 14 16 18 20 f=200mhz f=500mhz when mounted on ceramic substrate (250mm 2 ? 0.8mm) ta=25 c single pulse when mounted on ceramic substrate (250mm 2 ? 0.8mm) output capacitance, reverse transfer capacitance, cob, cre -- pf it15252 1.0 2 3 5 7 10 2 3 5 7 100 2 3 57 2 3 5 7 0.1 2 3 5 7 i c / i b =10
2SC5551A no. a1118-4/4 sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party?s intellectual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. this catalog provides information as of december, 2009. specifications and information herein are subject to change without notice. ps
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